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ARCHIVE INFORMATION
MRF5S9101MR1 MRF5S9101MBR1
5
RF Device Data
Freescale Semiconductor
Figure 2. MRF5S9101MR1(MBR1) 900 MHz Test Circuit Component Layout
C10
C12
C15
C11
C20
C13
C1
C2
C8
C9
C14
R3
C16
C17
C19
R1
C18
VGG
R2
C4
C7
C21
C5
C3
C6
VDD
CUT OUT AREA
Rev 2
MRF5S9101N
900 MHz
Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor
signature/logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes will have
no impact on form, fit or function of the current product.
相关PDF资料
MRF5S9150HSR5 MOSFET RF N-CHAN 28V 33W NI-780S
MRF6P18190HR6 MOSFET RF N-CHAN 28V 44W NI-1230
MRF6P21190HR6 MOSFET RF N-CHAN 28V 44W NI-1230
MRF6P23190HR6 MOSFET RF N-CHAN 28V 40W NI-1230
MRF6P24190HR5 MOSFET RF N-CH 28V 190W NI-1230
MRF6P27160HR6 MOSFET RF N-CHAN 28V 35W NI-1230
MRF6P3300HR5 MOSFET RF N-CH 32V 300W NI-860C3
MRF6P9220HR5 MOSFET RF N-CH 28V 47W NI-860C3
相关代理商/技术参数
MRF5S9101N 制造商:-- 功能描述:MOSFET Transistor, N-Channel, TO-270
MRF5S9101NBR1 功能描述:射频MOSFET电源晶体管 100W 900MHZ26V RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray
MRF5S9101NR1 功能描述:射频MOSFET电源晶体管 100W 900MHZ26V RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray
MRF5S9150HR3 功能描述:射频MOSFET电源晶体管 HV5 900MHZ 150W NI780H RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray
MRF5S9150HR3_09 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistor
MRF5S9150HR5 功能描述:射频MOSFET电源晶体管 HV5 900MHZ 150W NI780H RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray
MRF5S9150HSR3 功能描述:射频MOSFET电源晶体管 HV5 900MHZ 150W NI780HS RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray
MRF5S9150HSR5 功能描述:射频MOSFET电源晶体管 HV5 900MHZ 150W NI780HS RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray